Title: Large Tunneling Magnetoresistance in VSe₂/MoS₂ Magnetic Tunnel Junction

Abstract: Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe₂/MoS₂ heterojunction, where the VSe₂ monolayer acts as a ferromagnet with room-temperature ferromagnetism. We propose the concept of spin–orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The nonequilibrium study reveals a large tunneling magnetoresistance of 846% at 300 K, identifying significantly its parallel and antiparallel states. Thanks to the strong spin Hall conductivity of MoS₂, SOT is promising for the magnetization switching of VSe₂ free layer. Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe₂/MoS₂ provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.