Advanced Electronic Materials
07 September 2020
Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO2 Nanowire‐Based Memristor
Xuanyu Shan, Zhongqiang Wang,Ya Lin, Tao Zeng, Xiaoning Zhao, Haiyang Xu,and Yichun Liu
Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024 China
10.1002/aelm.202000536
In article number 2000536 by Zhongqiang Wang, Haiyang Xu, Yichun Liu, and co-workers, activation of silent synapse to functional synapse is demonstrated by plasma-treatment in TiO2-nanowire based memristor. The pristine device acts as the silent synapse without synaptic plasticity and the plasmatreated device mimicked functional synapse, which is beneficial for expanding the plasticity of artificial synapse.
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