Electron
15 June 2024
Sb-Se-based electrical switching device with fast transition speed and minimized performance degradation due to stable mid-gap states
Xianliang Mai1,†, Qundao Xu1,†, Zhe Yang1,†, Huan Wang1, Yongpeng Liu1, Yinghua Shen1, Hengyi Hu1, Meng Xu2, Zhongrui Wang2, Hao Tong1,3, Chengliang Wang1,*, Xiangshui Miao1,3, Ming Xu1,3,*
1 Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China
2 Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China
3 Hubei Yangtze Memory Laboratories, Wuhan, China
† Xianliang Mai, Qundao Xu and Zhe Yang contributed equally to this work.
10.1002/elt2.46
The chalcogenide-based ovonic threshold switching (OTS) device, renowned for its swift and reliable attributes, emerges as an indispensable component in memory chips and neuromorphic computing architectures. Nevertheless, the functional material is prone to glass relaxation, which engenders performance deterioration and threshold switching voltage variability over multiple switching cycles. In this cover image (DOI: 10.1002/elt2.46), the authors proposed a simple binary OTS device to address this issue. A comprehensive exploration via first-principles calculations has unveiled the fundamental mechanisms underpinning the material’s robust performance.
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